Monte Carlo Simulation of the Electron Mobility in Strained Silicon
نویسندگان
چکیده
The SiGe/Si material system is recently a subject of increased research interest, since it provides beneficial band structure and transport properties due to strain. Monte Carlo method is used for analyzing these properties. Special focus is put on the description of the anisotropic majority/minority electron mobility in strained Si layers as a function of doping, electric field, and material composition.
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تاریخ انتشار 2006